
High BVCEO phototransistor output optocoupler, 6-pin DIP package, surface mount. Features 5.25kV isolation voltage, 400mV collector-emitter saturation voltage, and 400mV collector-emitter voltage. Offers 200% current transfer ratio, 60mA forward current, and 50mA max collector current. Operates from -40°C to 100°C with 250mW power dissipation. Packaged on tape and reel for 1000 units.
Onsemi CNY17F3SR2M technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 400mV |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Tin, Matte |
| Current Transfer Ratio | 200% |
| Fall Time | 24000ns |
| Forward Current | 60mA |
| Input Type | DC |
| Isolation Voltage | 5.25kV |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Input Current | 60mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Output Voltage | 70V |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50mA |
| Output Voltage | 70V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| Weight | 0.81g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi CNY17F3SR2M to view detailed technical specifications.
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