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Technical Specifications
Onsemi FD6M016N03 technical specifications.
General
| Package/Case | Module |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 60ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 11.535nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Package Quantity | 19 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.6mR |
| RoHS Compliant | Yes |
| Series | Power-SPM™ |
| Turn-Off Delay Time | 90ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FD6M016N03 Datasheet
Download the complete datasheet for Onsemi FD6M016N03 to view detailed technical specifications.
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