The FDB13AN06A0_Q is a TO-263AB packaged N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current of 62A and a drain to source breakdown voltage of 60V. The device features a drain to source resistance of 11.5mR and a power dissipation of 115W. The FDB13AN06A0_Q has a fall time of 26ns and a turn-off delay time of 44ns.
PackageTO-263AB
PolarityN-CHANNEL
Power115W
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Technical Specifications
Onsemi FDB13AN06A0_Q technical specifications.
General
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 62A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 11.5mR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 115W |
| Turn-Off Delay Time | 44ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDB13AN06A0_Q Datasheet
Download the complete datasheet for Onsemi FDB13AN06A0_Q to view detailed technical specifications.
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