The FDB20AN06A0_Q is a 60V N-channel MOSFET with a continuous drain current of 45A and a drain to source resistance of 17mR. It has a power dissipation of 90W and is packaged in a TO-263AB case. The device operates over a temperature range of -55°C to 175°C and is available in tape and reel packaging.
PackageTO-263AB
Resistance0.002R
PolarityN-CHANNEL
Power90W
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Technical Specifications
Onsemi FDB20AN06A0_Q technical specifications.
General
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 17mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Resistance | 0.002R |
| Turn-Off Delay Time | 23ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDB20AN06A0_Q Datasheet
Download the complete datasheet for Onsemi FDB20AN06A0_Q to view detailed technical specifications.
No datasheet is available for this part.