The FDB3652_Q is a TO-263 packaged N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 100V and a continuous drain current of 61A. The device has a power dissipation of 150W and a gate to source voltage of 20V. The FDB3652_Q is available in tape and reel packaging.
PackageTO-263
PolarityN-CHANNEL
Power150W
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Technical Specifications
Onsemi FDB3652_Q technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 61A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 14mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDB3652_Q Datasheet
Download the complete datasheet for Onsemi FDB3652_Q to view detailed technical specifications.
No datasheet is available for this part.