The FDB6030BL_Q is a TO-263 packaged N-channel power MOSFET from Onsemi. It features a maximum operating temperature range of -65°C to 175°C and a power dissipation of 60W. The device has a continuous drain current of 40A and a drain to source breakdown voltage of 30V. The FDB6030BL_Q also has a drain to source resistance of 18mR and a gate to source voltage of 20V.
PackageTO-263
PolarityN-CHANNEL
Power60W
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Technical Specifications
Onsemi FDB6030BL_Q technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 18mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Turn-Off Delay Time | 23ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDB6030BL_Q Datasheet
Download the complete datasheet for Onsemi FDB6030BL_Q to view detailed technical specifications.
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