The FDB6690S_Q is a N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 42A and a drain to source breakdown voltage of 30V. The device has a drain to source resistance of 1.55mR and a power dissipation of 48W. It is packaged in a TO-263AB package and is available in tape and reel packaging.
PackageTO-263AB
PolarityN-CHANNEL
Power48W
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Technical Specifications
Onsemi FDB6690S_Q technical specifications.
General
| Package/Case | TO-263AB |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 1.55mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Turn-Off Delay Time | 23ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDB6690S_Q Datasheet
Download the complete datasheet for Onsemi FDB6690S_Q to view detailed technical specifications.
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