The FDC6305N_Q is an N-channel MOSFET with a drain to source breakdown voltage of 20V and a continuous drain current of 2.7A. It has a drain to source resistance of 60mR and a power dissipation of 900mW. The device operates over a temperature range of -55°C to 150°C and is packaged on tape and reel. The FDC6305N_Q has a turn-off delay time of 11ns and a fall time of 8.5ns. It can handle a gate to source voltage of up to 8V.
PolarityN-CHANNEL
Power900mW
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Technical Specifications
Onsemi FDC6305N_Q technical specifications.
General
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 60mR |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 900mW |
| Turn-Off Delay Time | 11ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDC6305N_Q Datasheet
Download the complete datasheet for Onsemi FDC6305N_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.