The FDC638P_Q is a P-channel MOSFET with a continuous drain current of -4.5A and a drain to source breakdown voltage of -20V. It features a drain to source resistance of 48 milliohms and a power dissipation of 1.6 watts. The device operates over a temperature range of -55°C to 150°C and is packaged in tape and reel format.
PolarityP-CHANNEL
Power1.6W
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Technical Specifications
Onsemi FDC638P_Q technical specifications.
General
| Continuous Drain Current (ID) | -4.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 48mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.6W |
| Turn-Off Delay Time | 33ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDC638P_Q Datasheet
Download the complete datasheet for Onsemi FDC638P_Q to view detailed technical specifications.
No datasheet is available for this part.