
The FDC653N_F095 is a surface mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 5A and a drain to source breakdown voltage of 30V. The device has a power dissipation of 1.6W and a fall time of 12ns. The FDC653N_F095 is available in a tape and reel packaging with 3000 units per package.
Onsemi FDC653N_F095 technical specifications.
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 7.5ns |
| RoHS | Not CompliantNo |
Download the complete datasheet for Onsemi FDC653N_F095 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
