The FDD6530A_Q is an N-channel MOSFET with a drain to source breakdown voltage of 20V and a continuous drain current of 21A. It features a drain to source resistance of 32 milliohms and a power dissipation of 33W. The device is packaged in a TO-252AA package and is available in tape and reel packaging. The FDD6530A_Q operates over a temperature range of -55°C to 175°C.
PackageTO-252AA
PolarityN-CHANNEL
Power33W
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Technical Specifications
Onsemi FDD6530A_Q technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 32mR |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| Turn-Off Delay Time | 18ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDD6530A_Q Datasheet
Download the complete datasheet for Onsemi FDD6530A_Q to view detailed technical specifications.
No datasheet is available for this part.