The FDD6690A_Q is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 46A. It features a drain to source resistance of 12mR and a power dissipation of 3.3W. The device is packaged in a TO-252 case and is available on tape and reel. The FDD6690A_Q operates over a temperature range of -55°C to 175°C.
PackageTO-252
PolarityN-CHANNEL
Power3.3W
Quick Jump:
Technical Specifications
Onsemi FDD6690A_Q technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.3W |
| Turn-Off Delay Time | 29ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDD6690A_Q Datasheet
Download the complete datasheet for Onsemi FDD6690A_Q to view detailed technical specifications.
No datasheet is available for this part.