The FDG326P_Q is a P-channel FET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of -1.5A and a power dissipation of 750mW. The device has a drain to source breakdown voltage of -20V and a drain to source resistance of 140mR. The FET has a gate to source voltage of 8V and a fall time of 13ns, with a turn-off delay time of 18ns.
PolarityP-CHANNEL
Power750mW
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Technical Specifications
Onsemi FDG326P_Q technical specifications.
General
| Continuous Drain Current (ID) | -1.5A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 140mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 750mW |
| Turn-Off Delay Time | 18ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDG326P_Q Datasheet
Download the complete datasheet for Onsemi FDG326P_Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.