The Onsemi FDG6306P_Q is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of -600mA and a drain to source breakdown voltage of -20V. The device also features a drain to source resistance of 420mR and a power dissipation of 300mW. The FDG6306P_Q is packaged in tape and reel format.
PolarityP-CHANNEL
Power300mW
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Technical Specifications
Onsemi FDG6306P_Q technical specifications.
General
| Continuous Drain Current (ID) | -600mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 420mR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 300mW |
| Turn-Off Delay Time | 6ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDG6306P_Q Datasheet
Download the complete datasheet for Onsemi FDG6306P_Q to view detailed technical specifications.
No datasheet is available for this part.