The FDG6313N_NL is a 25V N-CHANNEL MOSFET with a continuous drain current of 500mA and a power dissipation of 300mW. It has a gate to source voltage of 8V and a drain to source breakdown voltage of 25V. The device has a drain to source resistance of 340mR and a fall time of 8.5ns. It is RoHS compliant and operates over a temperature range of -55°C to 150°C. The MOSFET is available in a tape and reel packaging with 3000 pieces per reel.
PolarityN-CHANNEL
Power300mW
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Technical Specifications
Onsemi FDG6313N_NL technical specifications.
General
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 340mR |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDG6313N_NL Datasheet
Download the complete datasheet for Onsemi FDG6313N_NL to view detailed technical specifications.
No datasheet is available for this part.