The FDG6316P_Q is a P-channel FET with a continuous drain current of -700mA and a drain to source breakdown voltage of -12V. It has a drain to source resistance of 270mR and a power dissipation of 300mW. The device operates over a temperature range of -55°C to 150°C and is packaged in tape and reel form.
PolarityP-CHANNEL
Power300mW
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Technical Specifications
Onsemi FDG6316P_Q technical specifications.
General
| Continuous Drain Current (ID) | -700mA |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 270mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 300mW |
| Turn-Off Delay Time | 8ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDG6316P_Q Datasheet
Download the complete datasheet for Onsemi FDG6316P_Q to view detailed technical specifications.
No datasheet is available for this part.