The FDM606P_Q is a P-channel FET with a continuous drain current of -6.8A and a drain to source breakdown voltage of -20V. It has a drain to source resistance of 26mR and a power dissipation of 1.92W. The device operates over a temperature range of -55°C to 150°C and is packaged in tape and reel form.
PolarityP-CHANNEL
Power1.92W
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Technical Specifications
Onsemi FDM606P_Q technical specifications.
General
| Continuous Drain Current (ID) | -6.8A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 26mR |
| Fall Time | 46ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.92W |
| Turn-Off Delay Time | 134ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDM606P_Q Datasheet
Download the complete datasheet for Onsemi FDM606P_Q to view detailed technical specifications.
No datasheet is available for this part.