The FDN302P_Q is a P-channel FET from Onsemi with a breakdown voltage of -20V and a continuous drain current of -2.4A. It can handle a maximum power dissipation of 500mW and operates within a temperature range of -55°C to 150°C. The device has a drain to source resistance of 55mR and a fall time of 11ns.
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Onsemi FDN302P_Q technical specifications.
General
| Continuous Drain Current (ID) | -2.4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 55mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDN302P_Q Datasheet
Download the complete datasheet for Onsemi FDN302P_Q to view detailed technical specifications.
No datasheet is available for this part.