The FDN338P_Q is a P-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum drain to source breakdown voltage of -20V and a drain to source resistance of 115mR. The device can handle a continuous drain current of -1.6A and a power dissipation of 500mW. The FDN338P_Q has a fall time of 11ns and a turn-off delay time of 16ns.
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Onsemi FDN338P_Q technical specifications.
General
| Continuous Drain Current (ID) | -1.6A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 115mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Turn-Off Delay Time | 16ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDN338P_Q Datasheet
Download the complete datasheet for Onsemi FDN338P_Q to view detailed technical specifications.
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