The FDP047AN08A0_F102 is a N-CHANNEL power MOSFET from Onsemi, featuring a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 80A and a drain to source breakdown voltage of 75V. The device is packaged in a TO-220AB package and is mounted through a hole. It is RoHS compliant and has a power dissipation of 310W.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power310W
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Technical Specifications
Onsemi FDP047AN08A0_F102 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 4.7mR |
| Drain to Source Voltage (Vdss) | 75V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| RoHS Compliant | Yes |
| Weight | 1.8g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FDP047AN08A0_F102 Datasheet
Download the complete datasheet for Onsemi FDP047AN08A0_F102 to view detailed technical specifications.
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