The FDP050AN06A0_Q is a N-CHANNEL power MOSFET from Onsemi with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 60V and a continuous drain current of 80A. The device has a drain to source resistance of 5mR and a power dissipation of 245W. It is packaged in a TO-220AB case and is available in rail/Tube packaging.
PackageTO-220AB
PolarityN-CHANNEL
Power245W
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Technical Specifications
Onsemi FDP050AN06A0_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5mR |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 245W |
| Turn-Off Delay Time | 28ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDP050AN06A0_Q Datasheet
Download the complete datasheet for Onsemi FDP050AN06A0_Q to view detailed technical specifications.
No datasheet is available for this part.