The FDP2670_Q is a TO-220AB packaged N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -65°C. It features a continuous drain current of 19A and a drain to source breakdown voltage of 200V. The device has a power dissipation of 93W and a gate to source voltage of 20V. The FDP2670_Q is packaged in rail/Tube and has a fall time of 23ns and a turn-off delay time of 26ns.
PackageTO-220AB
PolarityN-CHANNEL
Power93W
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Technical Specifications
Onsemi FDP2670_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 130mR |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 93W |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDP2670_Q Datasheet
Download the complete datasheet for Onsemi FDP2670_Q to view detailed technical specifications.
No datasheet is available for this part.