The FDP3652_Q is a TO-220AB packaged N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 100V and a continuous drain current of 61A. The device has a power dissipation of 150W and a gate to source voltage of 20V. It is available in rail/Tube packaging and has a fall time of 45ns and a turn-off delay time of 26ns.
PackageTO-220AB
Resistance0.016R
PolarityN-CHANNEL
Power150W
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Technical Specifications
Onsemi FDP3652_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 61A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 14mR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Resistance | 0.016R |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDP3652_Q Datasheet
Download the complete datasheet for Onsemi FDP3652_Q to view detailed technical specifications.
No datasheet is available for this part.
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