The FDP5690_Q is an N-channel power MOSFET from Onsemi, packaged in the TO-220AB case. It can handle a continuous drain current of up to 32A and a drain to source breakdown voltage of 60V. The device has a drain to source resistance of 27mR and a gate to source voltage of 20V. The FDP5690_Q is rated for a maximum operating temperature of 175°C and a minimum operating temperature of -65°C. It is available in rail or tube packaging.
PackageTO-220AB
PolarityN-CHANNEL
Power58W
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Technical Specifications
Onsemi FDP5690_Q technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 27mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 58W |
| Turn-Off Delay Time | 24ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDP5690_Q Datasheet
Download the complete datasheet for Onsemi FDP5690_Q to view detailed technical specifications.
No datasheet is available for this part.
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