The FDR842P_Q is a P-channel FET with a drain to source breakdown voltage of -12V and a continuous drain current of -11A. It has a drain to source resistance of 9mR and a gate to source voltage of 8V. The device can operate at temperatures between -55°C and 150°C and has a power dissipation of 1.8W. The FDR842P_Q is available in tape and reel packaging.
PolarityP-CHANNEL
Power1.8W
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Technical Specifications
Onsemi FDR842P_Q technical specifications.
General
| Continuous Drain Current (ID) | -11A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 9mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Turn-Off Delay Time | 201ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDR842P_Q Datasheet
Download the complete datasheet for Onsemi FDR842P_Q to view detailed technical specifications.
No datasheet is available for this part.