The FDS4470_Q is an N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 40V and a continuous drain current of 12.5A. The device has a drain to source resistance of 9mR and a power dissipation of 2.5W. The FDS4470_Q has a fall time of 29ns and a turn-off delay time of 37ns.
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS4470_Q technical specifications.
General
| Continuous Drain Current (ID) | 12.5A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 9mR |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 37ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS4470_Q Datasheet
Download the complete datasheet for Onsemi FDS4470_Q to view detailed technical specifications.
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