PackageSOIC
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FDS4770_Q technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 13.2A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 7.5mR |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 41ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS4770_Q Datasheet
Download the complete datasheet for Onsemi FDS4770_Q to view detailed technical specifications.
No datasheet is available for this part.