The FDS6375_Q is a P-channel MOSFET with a continuous drain current of -8A and a drain to source breakdown voltage of -20V. It features a drain to source resistance of 24 milliohms and a power dissipation of 2.5 watts. The device operates over a temperature range of -55°C to 175°C and is packaged in tape and reel form.
PolarityP-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
Onsemi FDS6375_Q technical specifications.
General
| Continuous Drain Current (ID) | -8A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 24mR |
| Fall Time | 57ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Turn-Off Delay Time | 124ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS6375_Q Datasheet
Download the complete datasheet for Onsemi FDS6375_Q to view detailed technical specifications.
No datasheet is available for this part.