The FDS6930A_Q is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 5.5A. It has a drain to source resistance of 40mR and a power dissipation of 2W. The device operates over a temperature range of -55°C to 150°C and is packaged in tape and reel form.
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi FDS6930A_Q technical specifications.
General
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 40mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 17ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS6930A_Q Datasheet
Download the complete datasheet for Onsemi FDS6930A_Q to view detailed technical specifications.
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