The FDS6994S_Q is an N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 8.2A and a drain to source breakdown voltage of 30V. The device has a drain to source resistance of 15mR and a power dissipation of 2W. It is packaged in a SOIC package and is available on tape and reel.
PackageSOIC
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi FDS6994S_Q technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.2A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 15mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 16V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 50ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS6994S_Q Datasheet
Download the complete datasheet for Onsemi FDS6994S_Q to view detailed technical specifications.
No datasheet is available for this part.