PackageSOIC
PolarityP-CHANNEL
Power2W
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Technical Specifications
Onsemi FDS8333C_Q technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -3.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 105mR |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 11ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS8333C_Q Datasheet
Download the complete datasheet for Onsemi FDS8333C_Q to view detailed technical specifications.
No datasheet is available for this part.