The FDS9945_Q is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 60V and a continuous drain current of 3.5A. It has a drain to source resistance of 100mR and a power dissipation of 2W. The device operates over a temperature range of -55°C to 175°C and is available in tape and reel packaging.
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi FDS9945_Q technical specifications.
General
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 100mR |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Turn-Off Delay Time | 19ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDS9945_Q Datasheet
Download the complete datasheet for Onsemi FDS9945_Q to view detailed technical specifications.
No datasheet is available for this part.