The FDU6696_Q is a TO-251 packaged N-channel power MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a continuous drain current of 50A and a drain to source breakdown voltage of 30V. The device has a drain to source resistance of 8mR and a power dissipation of 3.8W. The FDU6696_Q is available in rail or tube packaging.
PackageTO-251
PolarityN-CHANNEL
Power3.8W
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Technical Specifications
Onsemi FDU6696_Q technical specifications.
General
| Package/Case | TO-251 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 16V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| Turn-Off Delay Time | 27ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDU6696_Q Datasheet
Download the complete datasheet for Onsemi FDU6696_Q to view detailed technical specifications.
No datasheet is available for this part.