The FDV301N_Q is an N-channel MOSFET in a SOT-23 package, rated for 25V drain to source breakdown voltage and 220mA continuous drain current. It can handle up to 350mW of power dissipation and operates between -55°C and 150°C. The device has a gate to source voltage of 8V and a drain to source resistance of 5 ohms.
Onsemi FDV301N_Q technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 220mA |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 5R |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Turn-Off Delay Time | 3.5ns |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi FDV301N_Q to view detailed technical specifications.
No datasheet is available for this part.