The FDW2501N_Q is a N-CHANNEL MOSFET with a continuous drain current of 6A and a drain to source breakdown voltage of 20V. It features a drain to source resistance of 18mR and a gate to source voltage of 12V. The device is packaged in a TSSOP package and is available in tape and reel packaging. It operates over a temperature range of -55°C to 150°C.
PackageTSSOP
PolarityN-CHANNEL
Power1W
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Technical Specifications
Onsemi FDW2501N_Q technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 18mR |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDW2501N_Q Datasheet
Download the complete datasheet for Onsemi FDW2501N_Q to view detailed technical specifications.
No datasheet is available for this part.