The FDW258P_Q is a P-channel MOSFET with a breakdown voltage of -12V and a continuous drain current of -9A. It features a drain to source resistance of 11mR and a power dissipation of 1.3W. The device operates over a temperature range of -55°C to 150°C and is packaged in a TSSOP package for tape and reel.
PackageTSSOP
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Onsemi FDW258P_Q technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | -9A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 11mR |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.3W |
| Turn-Off Delay Time | 201ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDW258P_Q Datasheet
Download the complete datasheet for Onsemi FDW258P_Q to view detailed technical specifications.
No datasheet is available for this part.