The FDZ208P_Q is a P-CHANNEL MOSFET from Onsemi with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of -30V and a continuous drain current of -12.5A. The device has a power dissipation of 2.2W and a drain to source resistance of 10.5mR. It is packaged in a BGA package and is available in tape and reel packaging.
PackageBGA
PolarityP-CHANNEL
Power2.2W
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Technical Specifications
Onsemi FDZ208P_Q technical specifications.
General
| Package/Case | BGA |
| Continuous Drain Current (ID) | -12.5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 10.5mR |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.2W |
| Turn-Off Delay Time | 74ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDZ208P_Q Datasheet
Download the complete datasheet for Onsemi FDZ208P_Q to view detailed technical specifications.
No datasheet is available for this part.