The FDZ298N_Q is an N-channel MOSFET with a continuous drain current of 6A and a drain to source breakdown voltage of 20V. It has a fall time of 7ns and a gate to source voltage of 12V. The device operates over a temperature range of -55°C to 150°C and is packaged in tape and reel form.
PolarityN-CHANNEL
Power1.7W
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Technical Specifications
Onsemi FDZ298N_Q technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 20V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.7W |
| Turn-Off Delay Time | 14ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDZ298N_Q Datasheet
Download the complete datasheet for Onsemi FDZ298N_Q to view detailed technical specifications.
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