The FDZ5047N_Q is a high-power N-channel MOSFET from Onsemi, featuring a breakdown voltage of 30V and a continuous drain current of 22A. It has a power dissipation of 2.8W and operates within a temperature range of -50°C to 150°C. The device is packaged in a BGA package and is available on tape and reel.
PackageBGA
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
Onsemi FDZ5047N_Q technical specifications.
General
| Package/Case | BGA |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 30V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Turn-Off Delay Time | 119ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FDZ5047N_Q Datasheet
Download the complete datasheet for Onsemi FDZ5047N_Q to view detailed technical specifications.
No datasheet is available for this part.