The FGA25N120ANDTU is a high-power NPN transistor from Onsemi with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 40A. It has a maximum power dissipation of 310W and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a through-hole configuration and is compliant with RoHS regulations. It is suitable for high-power applications requiring a high current rating and high voltage tolerance.
Current Rating25A
MountingThrough Hole
Power310W
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Technical Specifications
Onsemi FGA25N120ANDTU technical specifications.
General
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 3.2V |
| Current Rating | 25A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 310W |
| Reverse Recovery Time | 350ns |
| RoHS Compliant | Yes |
| DC Rated Voltage | 1.2kV |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA25N120ANDTU Datasheet
Download the complete datasheet for Onsemi FGA25N120ANDTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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