Onsemi
FGA25N120ANTD
FAIRCHILD SEMICONDUCTOR FGA25N120ANTD IGBT Single Transistor, 50 A, 2.5 V, 312 W, 1.2 kV, TO-3P, 3 Pins
Power312W
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Technical Specifications
Onsemi FGA25N120ANTD technical specifications.
General
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 312W |
| Power Dissipation | 312W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA25N120ANTD Datasheet
Download the complete datasheet for Onsemi FGA25N120ANTD to view detailed technical specifications.
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