The FGA25S125P is a NPN transistor with a collector-emitter breakdown voltage of 1.25kV and a maximum collector current of 50A. It has a maximum power dissipation of 250W and operates over a temperature range of -55°C to 175°C. The transistor is packaged in a through-hole package with a weight of 6.401g and dimensions of 20.1mm height, 15.8mm length, and 5mm width. It is RoHS compliant and available in quantities of 30 per packaging unit.
MountingThrough Hole
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Technical Specifications
Onsemi FGA25S125P technical specifications.
General
| Collector Emitter Breakdown Voltage | 1.25kV |
| Collector Emitter Saturation Voltage | 2.16V |
| Collector-emitter Voltage-Max | 2.35V |
| Height | 20.1mm |
| Input Type | STANDARD |
| Length | 15.8mm |
| Max Collector Current | 50A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FGA25S125P Datasheet
Download the complete datasheet for Onsemi FGA25S125P to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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