The FJC1308RTF_Q PNP transistor is packaged in a SOT-89 case, suitable for through-hole mounting. It can handle a maximum collector current of 3A and a maximum power dissipation of 500mW. The device operates over a temperature range of -55°C to 150°C. The FJC1308RTF_Q has a minimum current gain of 180 and can withstand a collector-base voltage of up to -30V.
PackageSOT-89
PolarityPNP
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Technical Specifications
Onsemi FJC1308RTF_Q technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | -30V |
| Collector-emitter Voltage-Max | -30V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 180 |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Series | FJC1308 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FJC1308RTF_Q Datasheet
Download the complete datasheet for Onsemi FJC1308RTF_Q to view detailed technical specifications.
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