The FJC1386RTF_Q is a PNP transistor from Onsemi, packaged in a SOT-89 case. It can handle a collector-emitter voltage of up to -20V and a collector base voltage of -30V. The device has a minimum current gain of 180 and a maximum collector current of 5A. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 500mW.
PackageSOT-89
PolarityPNP
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Technical Specifications
Onsemi FJC1386RTF_Q technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | -30V |
| Collector-emitter Voltage-Max | -20V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 180 |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Series | FJC1386 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FJC1386RTF_Q Datasheet
Download the complete datasheet for Onsemi FJC1386RTF_Q to view detailed technical specifications.
No datasheet is available for this part.