The FJC1963RTF_Q is a NPN transistor from Onsemi with a maximum collector-emitter voltage of 30V and a maximum collector current of 3A. It features a high current gain of 180hFE and can operate at temperatures up to 150°C. The device is packaged in a SOT-89 case and is available in quantities of 4000 per reel. It is suitable for use in a variety of applications including general-purpose switching and amplification.
PackageSOT-89
PolarityNPN
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Technical Specifications
Onsemi FJC1963RTF_Q technical specifications.
General
| Package/Case | SOT-89 |
| Collector Base Voltage (VCBO) | 50V |
| Collector-emitter Voltage-Max | 30V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 180 |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Series | FJC1963 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FJC1963RTF_Q Datasheet
Download the complete datasheet for Onsemi FJC1963RTF_Q to view detailed technical specifications.
No datasheet is available for this part.