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Technical Specifications
Onsemi FJNS4209RBU technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Through Hole |
| Package Quantity | 10000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJNS4209RBU Datasheet
Download the complete datasheet for Onsemi FJNS4209RBU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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