The FJV3112RMTF_Q is a NPN transistor with a maximum collector-emitter voltage of 40V and a continuous collector current of 100mA. It has a high current gain of 100 and a maximum power dissipation of 200mW. The device is packaged in a SOT-23-3 package and is available in quantities of 3000 on tape and reel. The operating temperature range is from -55°C to 150°C.
PackageSOT-23-3
PolarityNPN
Power200mW
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Technical Specifications
Onsemi FJV3112RMTF_Q technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector-emitter Voltage-Max | 40V |
| Continuous Collector Current | 100mA |
| hFE Min | 100 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Series | FJV3112R |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FJV3112RMTF_Q Datasheet
Download the complete datasheet for Onsemi FJV3112RMTF_Q to view detailed technical specifications.
No datasheet is available for this part.