The FJV4101RMTF_Q is a PNP transistor with a maximum collector-emitter voltage of 50V and continuous collector current of -100mA. It features a minimum current gain of 20 and a power dissipation of 200mW. The device is packaged in a SOT-23-3 package and is available in quantities of 3000 per reel. It operates over a temperature range of -55°C to 150°C.
PackageSOT-23-3
PolarityPNP
Power200mW
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Technical Specifications
Onsemi FJV4101RMTF_Q technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector-emitter Voltage-Max | 50V |
| Continuous Collector Current | -100mA |
| hFE Min | 20 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Series | FJV4101R |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FJV4101RMTF_Q Datasheet
Download the complete datasheet for Onsemi FJV4101RMTF_Q to view detailed technical specifications.
No datasheet is available for this part.