The FJZ733 PNP transistor features a collector base voltage of -60V, a maximum collector-emitter voltage of -50V, and an emitter base voltage of 5V. It has a gain bandwidth product of 180MHz and a minimum current gain of 40. The device can handle a maximum collector current of 150mA and a maximum power dissipation of 100mW. The FJZ733 is available in a tape and reel packaging with 3000 units per package.
PolarityPNP
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Technical Specifications
Onsemi FJZ733RTF_Q technical specifications.
General
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | -50V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 180MHz |
| hFE Min | 40 |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Series | FJZ733 |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi FJZ733RTF_Q Datasheet
Download the complete datasheet for Onsemi FJZ733RTF_Q to view detailed technical specifications.
No datasheet is available for this part.
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