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Technical Specifications
Onsemi FOD2712R1 technical specifications.
General
| Package/Case | SOIC |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 400mV |
| Current Transfer Ratio | 200% |
| Forward Current | 20mA |
| Input Type | DC |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Circuits | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50mA |
| Output Type | Phototransistor |
| Output Voltage | 30V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 145mW |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FOD2712R1 Datasheet
Download the complete datasheet for Onsemi FOD2712R1 to view detailed technical specifications.
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